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US6M1
Transistors
4V+2.5V Drive Nch+Nch MOSFET
US6M1
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
Application
Power switching, DC / DC converter.
Packaging specifications
Dimensions (Unit : mm)
TUMT6
Abbreviated symbol : M01
Equivalent circuit
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
(6)
(5)
? 1
(4)
US6M1
? 2
? 1
? 2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1)
(2)
(3)
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
Absolute maximum ratings (Ta=25 ° C)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Parameter
Symbol
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
Drain-source voltage
Gate-source voltage
V DSS
V GSS
30
20
? 20
? 12
V
V
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
± 1.4
± 5.6
0.6
5.6
± 1
± 4
? 0.4
? 4
A
A
A
A
Total power dissipation
Channel temperature
Storage temperature
P D ? 2
Tch
Tstg
1
0.7
150
? 55 to + 150
W / TOTAL
W / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
? 2 Mounted on a ceramic board.
Rth
(ch-a) ?
125
179
° C / W /TOTAL
° C / W / ELEMENT
Rev.B
1/7
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